Blaze DFM Solution Proven in Silicon on Mobile Baseband Processor

Sunnyvale, Calif. – July 17, 2006 – Blaze DFM, Inc.

What: DFM Case Study

Where: Chip Design Magazine

Title: Leakage Power and Variability Reduction in a Mobile Baseband Processor

In an article published online this week in the iDesign Center of Chip Design Magazine, Sorin Dobre, Ke Cao, Charlie Matar, Matt Severson, and Omer Sheikh of Qualcomm present a case study on their use of Blaze MO(TM) optimization software. Using Blaze MO, the design team was able to reduce leakage power by 20 percent and leakage variability by 28 percent on a 90nm mobile baseband processor. According to the authors, they were also able to significantly improve parametric yield using Blaze MO. These results were verified in silicon by fabricating pre-Blaze and post-Blaze die side-by-side on the same wafers. Blaze MO, the semiconductor industry's first electrical DFM solution, is available from Blaze DFM, Inc. (Click here to view article.)

For more information about Blaze, see the company website at http://www.blaze-dfm.com.

About Blaze MO
Blaze MO equips chip designers with the ability to get the most out of 90nm and below process technologies. With Blaze MO, designers drive their power and performance requirements into the manufacturing flow, effectively “turbo charging” the manufacturing process. Blaze enhanced designs are faster, less leaky and have better parametric yield.

About Blaze DFM
Blaze DFM provides software solutions to fabless semiconductor companies, integrated device manufacturers and silicon foundries. Our products give IC designers greater control over manufacturing variability, improving yield and shortening time to volume production. Blaze DFM, Inc., 1275 Orleans Drive, Sunnyvale, CA 94089, 408-470-4900. Web: http://www.blaze-dfm.com
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